Memory IC 70T3339S133BCI8 product image

70T3339S133BCI8

$200.79
  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:c0733f457e1b Category: Brand:

  
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70T3339S133BCI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T3339S133BCI8

  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Synchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:4.2 ns

Memory IC datasheet and documents for 70T3339S133BCI8

70T3339S133BCI8

Memory IC Overview

The Renesas 70T3339S133BCI8 is a high-performance synchronous dual-port static random-access memory (SRAM) device. It features a storage capacity of 512K x 18 bits, organized as 512K words with an 18-bit data width. The component operates at a maximum clock frequency of 133 MHz with a typical access time of 4.2 ns. It requires a supply voltage range of 2.4V to 2.6V and functions within an ambient temperature range of 0°C to 70°C. The integrated circuit is housed in a 256-lead CABGA package measuring 17x17 mm.

Memory IC Feature Summary

  • Supports simultaneous independent read and write operations on both ports without bus conflicts.
  • Utilizes synchronous architecture for precise timing control via a single clock input.
  • Integrates dedicated byte write controls for granular data masking capabilities.

Memory IC Applications

  • High-speed digital signal processing systems requiring low-latency buffering.
  • Network infrastructure equipment utilizing packet switching and routing.
  • Telecommunications base stations handling real-time data transmission.

Memory IC Procurement Notes

Verify the specific suffix configuration against official datasheets to ensure compatibility with required voltage levels and operating temperatures. Confirm current availability status as discontinuation notices may apply to this series. Validate moisture sensitivity levels and reflow soldering profiles prior to assembly to prevent package damage during manufacturing processes.

Memory IC Selection Notes

Select this component when designing systems that demand concurrent access to shared memory resources without arbitration delays. Ensure the power supply design strictly maintains the 2.4V to 2.6V range to guarantee stable operation. Consider the thermal dissipation requirements associated with the CABGA package layout in dense PCB configurations.

Memory IC Part Context

This device belongs to the 70T3339S133 family of synchronous dual-port SRAMs manufactured by Renesas Electronics. The family shares common architectural features including high-speed interface protocols and robust data integrity mechanisms. These components are engineered for applications requiring deterministic timing and high throughput in complex electronic systems.

Memory IC Replacement Considerations

Consult official documentation for verified substitute part numbers within the same product family. Cross-referencing pinouts and electrical specifications is essential when evaluating alternative sources or updated revisions of the component.

70T3339S133BCI870T3339S133BCI8
$200.79
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