Memory IC 70T3339S133BFI product image

70T3339S133BFI

$221.13
  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:acf591b27f80 Category: Brand:

  
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70T3339S133BFI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T3339S133BFI

  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Synchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:4.2 ns

Memory IC datasheet and documents for 70T3339S133BFI

70T3339S133BFI

Memory IC Overview

The 70T3339S133BFI is a synchronous dual-port static random access memory (SRAM) manufactured by Renesas Electronics. It provides a total storage capacity of 9 megabits, organized as 512K words by 18 bits. The device supports parallel interface operations with a maximum clock frequency of 133 MHz and an access time of 4.2 nanoseconds. It operates within a supply voltage range of 2.4V to 2.6V and functions reliably across an industrial temperature range from -40°C to +85°C. The component is housed in a 208-lead CABGA package measuring 15x15 mm.

Memory IC Feature Summary

  • Supports simultaneous independent access to the same memory location from both ports
  • Features full synchronous operation on both ports for high-speed data transfer
  • Includes collision detection logic to manage concurrent write conflicts

Memory IC Applications

  • High-performance networking equipment requiring low-latency buffering
  • Telecommunications systems utilizing packet switching architectures
  • Industrial automation controllers needing rapid data exchange between processors

Memory IC Procurement Notes

Verify current production status as this specific part number may be discontinued or subject to product change notifications. Confirm exact package marking and moisture sensitivity level requirements before ordering. Ensure compatibility with existing board designs regarding pinout and electrical specifications. Consult official Renesas documentation for any alternative recommended replacements if availability is limited.

Memory IC Selection Notes

Select this component when designing systems that require true dual-port memory capabilities with synchronous timing constraints. It is suitable for applications demanding high bandwidth and deterministic access times. Consider the 208-CABGA package size for thermal and spatial constraints. Verify power supply stability within the specified 2.4V to 2.6V range to ensure reliable operation at 133 MHz.

Memory IC Part Context

This device belongs to the 70T3339 series of synchronous dual-port SRAMs. It shares architectural similarities with other members like the 70T3519 but differs in organization and voltage specifications. The series is designed for embedded applications requiring fast, conflict-managed memory access. It represents a solution for bridging high-speed processors with large data buffers without external arbitration logic.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

70T3339S133BFI70T3339S133BFI
$221.13
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