70T3339S166BF8

Memory IC Overview

The Renesas Electronics Corporation 70T3339S166BF8 is a high-speed synchronous dual-port static random access memory (SRAM) organized as 256K by 18 bits, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 166 MHz and features an access time of 3.6 ns. The device utilizes a parallel interface and supports selectable core voltages of either 3.3V or 2.5V on one or both ports, controlled by OPT pins, while the core voltage (VDD) is maintained at 2.5V. It is housed in a 208-pin CABGA package measuring 15x15 mm with a 0.8 mm pitch, designed for surface mount installation within an operating temperature range of 0°C to +70°C.

Memory IC Feature Summary

• Supports simultaneous independent access to the same memory location from two separate ports without conflict.
• Features automatic power-down functionality controlled by chip enables to achieve very low standby power consumption.
• Allows depth expansion through dual chip enables without requiring additional external logic.

Memory IC Applications

• Applications requiring unidirectional data flow in burst modes
• Systems utilizing bidirectional data flow in burst modes
• High-speed networking equipment requiring fast memory access

Memory IC Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the specific suffix BF8 corresponds to the required 208-CABGA packaging and reel configuration. Ensure supply chain stability as this product family may have discontinuation notices. Validate environmental compliance status against current project requirements prior to final procurement decisions.

Memory IC Selection Notes

Select this component when simultaneous dual-port access is necessary for high-speed data processing. Choose this part over single-port alternatives if independent port control is required. Consider the 208-CABGA package constraints for PCB layout. Verify voltage compatibility between the 2.5V core and selectable I/O levels against system design specifications.

Memory IC Part Context

This component belongs to the 70T3339/19/99 series of synchronous dual-port SRAMs manufactured by Renesas Electronics. The series is optimized for applications involving burst data flows. The 70T3339 variant specifically provides 4.5 Mbit density with 18-bit word width, distinguishing it from other densities in the family such as the 70T3319.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for potential obsolescence management or alternative series recommendations.