Memory IC 70T3339S200BC product image

70T3339S200BC

$216.73
  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:1496ced12c2d Category: Brand:

  
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70T3339S200BC is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T3339S200BC

  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Synchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:3.4 ns

Memory IC datasheet and documents for 70T3339S200BC

70T3339S200BC

Memory IC Overview

The Renesas 70T3339S200BC is a high-speed synchronous dual-port static random-access memory (SRAM) organized as 512K x 18 bits, providing a total storage capacity of 9 Mbit. It operates with a maximum clock frequency of 200 MHz and features a typical access time of 3.4 ns. The device utilizes a parallel interface and supports both 3.3V and 2.5V power supplies. It is housed in a 256-CABGA package measuring 17x17 mm.

Memory IC Feature Summary

  • Dual-port architecture supporting independent read/write operations for unidirectional or bidirectional data flow
  • Pipelined output mode designed to enhance data transfer efficiency
  • Automatic power down capability activated by chip enable signals
  • Integrated JTAG functionality for boundary scan testing

Memory IC Applications

  • High-performance networking equipment requiring fast packet buffering
  • Telecommunications systems utilizing bidirectional data processing
  • Industrial control applications necessitating reliable synchronous memory
  • Embedded systems requiring JTAG-based diagnostic capabilities

Memory IC Procurement Notes

Verify the specific voltage requirement, as this component supports both 3.3V and 2.5V operation. Confirm that the selected variant matches the required supply voltage for your circuit design. Ensure compatibility with the 256-CABGA footprint during PCB layout. Check current availability status as lead times may vary due to production schedules.

Memory IC Selection Notes

Select this component when a synchronous dual-port SRAM with 200 MHz performance is required. It is suitable for designs needing simultaneous access from two different masters. Consider the 3.3V/2.5V flexibility for mixed-voltage systems. The pipelined output feature makes it ideal for high-throughput data paths compared to asynchronous alternatives.

Memory IC Part Context

This part belongs to the Renesas 70T3339 series of synchronous dual-port RAMs. The series is optimized for applications demanding high-speed data handling and low latency. These devices are commonly used in embedded environments where deterministic timing and reliable memory access are critical for system stability.

Memory IC Replacement Considerations

The IDT70T3339S200BC is a confirmed substitute part number for this component. Verify pinout and electrical specifications before substitution.

70T3339S200BC70T3339S200BC
$216.73
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