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70T3339S200BC is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.
The Renesas 70T3339S200BC is a high-speed synchronous dual-port static random-access memory (SRAM) organized as 512K x 18 bits, providing a total storage capacity of 9 Mbit. It operates with a maximum clock frequency of 200 MHz and features a typical access time of 3.4 ns. The device utilizes a parallel interface and supports both 3.3V and 2.5V power supplies. It is housed in a 256-CABGA package measuring 17x17 mm.
Verify the specific voltage requirement, as this component supports both 3.3V and 2.5V operation. Confirm that the selected variant matches the required supply voltage for your circuit design. Ensure compatibility with the 256-CABGA footprint during PCB layout. Check current availability status as lead times may vary due to production schedules.
Select this component when a synchronous dual-port SRAM with 200 MHz performance is required. It is suitable for designs needing simultaneous access from two different masters. Consider the 3.3V/2.5V flexibility for mixed-voltage systems. The pipelined output feature makes it ideal for high-throughput data paths compared to asynchronous alternatives.
This part belongs to the Renesas 70T3339 series of synchronous dual-port RAMs. The series is optimized for applications demanding high-speed data handling and low latency. These devices are commonly used in embedded environments where deterministic timing and reliable memory access are critical for system stability.
The IDT70T3339S200BC is a confirmed substitute part number for this component. Verify pinout and electrical specifications before substitution.
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