70T3339S200BC8

Memory IC Overview

The Renesas Electronics Corporation 70T3339S200BC8 is a high-speed synchronous dual-port static random-access memory (SRAM) with a total storage capacity of 9 megabits. The device features a memory organization of 512K words by 18 bits, supporting parallel interface operations at a clock frequency of 200 MHz. It offers a typical access time of 4.2 nanoseconds and operates within a supply voltage range of 2.4V to 2.6V. The component is housed in a 208-lead CABGA package measuring 15x15 mm and supports an industrial operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Simultaneous independent access to the same memory location via two separate ports
• Full synchronous operation on both ports for high-speed data throughput
• Selectable pipelined or flow-through output modes for flexible system integration
• Automatic power-down capability controlled by chip enables to reduce standby consumption

Memory IC Applications

• High-performance networking equipment requiring low-latency buffering
• Telecommunications systems utilizing burst data flow architectures
• Industrial automation controllers needing reliable real-time data storage
• Embedded systems demanding simultaneous bidirectional data transfer

Memory IC Procurement Notes

Verify the specific suffix BC8 against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm RoHS compliance status and moisture sensitivity level requirements before integration. Check for any recent product change notices that may affect lead material or assembly location. Ensure design-in approval aligns with current manufacturing capabilities.

Memory IC Selection Notes

Select this component when simultaneous read/write access to shared memory is required without external arbitration logic. The 200 MHz speed and 4.2 ns access time suit applications demanding high bandwidth. Verify that the 2.5V core voltage and LVTTL-compatible I/O levels match the target system's power rails. Consider the 208-CABGA package constraints for PCB layout and thermal management.

Memory IC Part Context

This part belongs to the 70T3339 series of synchronous dual-port SRAMs from Renesas. The series is designed for applications requiring high-density memory with concurrent port access. Variants within the family differ primarily in clock speed, access time, and package type while maintaining the same 512K x 18 bit architecture and core functionality.

Memory IC Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully. Generic equivalents may not support the specific synchronous dual-port timing requirements.