70T3339S200BCG

Memory IC Overview

The Renesas Electronics Corporation 70T3339S200BCG is a 9Mbit synchronous dual-port static random-access memory (SRAM) IC. It features a parallel interface with a maximum clock frequency of 200 MHz and an access time of 3.4 ns. The device operates within a supply voltage range of 2.4V to 2.6V and is housed in a 256-CABGA package measuring 17x17 mm. It supports an operating temperature range of 0°C to 70°C.

Memory IC Feature Summary

• Provides simultaneous independent read/write access through two distinct ports for high-throughput data handling.
• Utilizes synchronous logic controlled by a single clock signal to ensure precise timing alignment.
• Employs a parallel interface architecture for direct bus connectivity.

Memory IC Applications

• High-speed networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure systems
• Industrial automation controllers

Memory IC Procurement Notes

Verify component authenticity due to discontinuation status. Confirm RoHS compliance and moisture sensitivity level before assembly. Check for valid datasheets as official documentation may be archived. Ensure supply chain sources are authorized to avoid counterfeit risks associated with end-of-life products.

Memory IC Selection Notes

Select this component when synchronous dual-port operation at 200 MHz is required. Compare against the 70T3339S133 variant if lower speed suffices. Verify package compatibility with existing PCB footprints. Consider obsolescence implications for long-term production planning.

Memory IC Part Context

This part belongs to the 70T3339 series of high-speed synchronous dual-port SRAMs from Renesas. It shares architectural similarities with other members like the 70T3339S133 but offers higher clock speeds. The series targets applications demanding concurrent data access without arbitration overhead.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: None identified.