70T3399S133BC

Memory IC Overview

The 70T3399S133BC is a synchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 2 megabits organized as 128K words by 18 bits. The device operates with a parallel interface and supports a maximum clock frequency of 133 MHz, achieving an access time of 4.2 ns. It requires a supply voltage range of 2.4V to 2.6V and functions within a commercial temperature range of 0°C to 70°C. The component is housed in a 256-pin CABGA package measuring 17x17 mm.

Memory IC Feature Summary

• Supports simultaneous independent access to the same memory location from both ports
• Enables depth expansion through dual chip enable functionality without additional logic
• Provides selectable pipelined or flow-through output modes for optimized data flow

Memory IC Applications

• High-speed networking equipment requiring low-latency data buffering
• Telecommunications systems utilizing burst data transfer architectures
• Industrial control systems needing reliable synchronous memory interfaces

Memory IC Procurement Notes

Verify component authenticity due to end-of-life status. Confirm package integrity and moisture sensitivity level handling procedures. Check for RoHS compliance variations across manufacturing batches. Ensure supply chain sources provide valid traceability documentation for critical deployments.

Memory IC Selection Notes

Evaluate power supply requirements against the specific 2.4V to 2.6V operating range. Compare pin compatibility and thermal characteristics with existing board designs. Consider alternative packages if surface mount constraints differ. Assess system timing requirements against the 4.2 ns access specification.

Memory IC Part Context

This component belongs to the 70T3399 family of high-performance synchronous dual-port SRAMs. It shares architectural similarities with other variants in the series but differs in speed grade and voltage specifications. The device is designed for applications demanding high bandwidth and concurrent read/write operations.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.