70T3399S133BFI

Memory IC Overview

The Renesas Electronics Corporation 70T3399S133BFI is a high-speed synchronous dual-port static random access memory (SRAM) device. It features a memory organization of 256K x 18 bits, providing a total storage capacity of 4 megabits. The component supports a maximum clock frequency of 133 MHz with an access time of 4.2 nanoseconds. It operates on a single 3.3V power supply and utilizes a parallel interface for data transfer. The device is housed in a 208-pin CABGA package designed for surface mount technology.

Memory IC Feature Summary

• Supports simultaneous independent access to the same memory location from both ports without conflict
• Features selectable pipelined or flow-through output modes for flexible system integration
• Includes on-chip hardware support for semaphore signaling and port arbitration logic
• Provides automatic power down capabilities controlled by chip enable signals

Memory IC Applications

• High-performance networking equipment requiring low-latency data buffering
• Industrial automation systems utilizing bidirectional data flow bursts
• Telecommunications infrastructure involving signal processing and switching
• Embedded control systems needing fast shared memory resources

Memory IC Procurement Notes

Verify the specific suffix BFI against official Renesas documentation to confirm the exact temperature range and package variant. Confirm RoHS compliance status as older batches may differ. Check current production lifecycle status to ensure availability for new designs. Validate moisture sensitivity level requirements for your assembly process. Ensure pin compatibility if replacing existing components in established hardware layouts.

Memory IC Selection Notes

Select this component when simultaneous read/write operations are required across two distinct processors or controllers. Choose this part for applications demanding deterministic latency under 5 nanoseconds. Consider this SRAM type for systems where volatile memory speed outweighs density constraints. Verify that the 3.3V I/O levels match the target system voltage domains. Evaluate the 208-pin footprint availability within the target PCB design constraints.

Memory IC Part Context

This device belongs to the Renesas 70T series of synchronous dual-port RAMs. The series is engineered for burst data transfers in unidirectional or bidirectional flows. It integrates advanced arbitration logic to manage concurrent port accesses efficiently. The family typically offers industrial temperature ranges and various package options for diverse mounting needs.

Memory IC Replacement Considerations

Official substitutes include the IDT70T3399S133BFI. Cross-reference pinouts and electrical characteristics before implementation. Verify that alternative sources maintain identical timing parameters and package dimensions.