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70T3399S133BFI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 2MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.
The Renesas 70T3399S133BFI8 is a synchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 2 megabits, organized as 128K words by 18 bits. The device operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 nanoseconds. It requires a supply voltage range of 2.4V to 2.6V. The component is housed in a 256-lead CABGA package measuring 17x17 mm. It supports parallel interface communication and is designed for surface-mount installation.
Verify the specific suffix BFI8 against official Renesas documentation to confirm pinout compatibility and electrical specifications. Confirm RoHS compliance status as indicated in datasheets. Check for End-of-Life notifications or Product Change Notices that may affect long-term availability. Ensure moisture sensitivity level handling procedures are followed during assembly.
Select this component when designing systems requiring high-bandwidth data buffering with independent port access. Compare against alternative SRAM families based on required word width and organization. Evaluate power consumption characteristics relative to system thermal constraints. Verify package dimensions fit within the designated PCB footprint area.
This part belongs to the 70T3399 series of synchronous dual-port SRAMs manufactured by Renesas Electronics. The series is engineered for applications demanding fast data throughput and low latency. It represents a specialized memory solution distinct from standard single-port or asynchronous memory types.
Consult official substitution guides for compatible parts such as the IDT70T3399S133BC8. Verify functional equivalence regarding speed grades and voltage levels before implementation.
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