Memory IC 70T3509MS133BP product image

70T3509MS133BP

  • Description:IC SRAM 36MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:f39c2ec2411f Category: Brand:

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70T3509MS133BP is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 36MBIT PAR 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T3509MS133BP

  • Description:IC SRAM 36MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Synchronous
  • Memory Size:36Mbit
  • Memory Organization:1M x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-BGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for 70T3509MS133BP

70T3509MS133BP

Memory IC Overview

The Renesas Electronics Corporation 70T3509MS133BP is a synchronous dual-port static random-access memory (SRAM) component. It features a storage capacity of 36 Mbit organized as 1 Megabit by 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 2.4 V to 2.6 V and draws a maximum power current of 1.12 A. The component utilizes a parallel interface and is housed in a 256-ball CABGA package suitable for surface mount technology.

Memory IC Feature Summary

  • Supports simultaneous independent access to the same memory location via two distinct ports
  • Enables depth expansion without requiring external logic circuitry
  • Includes automatic power-down functionality controlled by chip enable signals

Memory IC Applications

  • High-speed data buffering in network communication systems
  • Cache memory implementation in embedded processing architectures
  • Data storage in industrial control equipment

Memory IC Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical characteristics and packaging specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the final assembly process.

Memory IC Selection Notes

Select this component when a system requires high-bandwidth concurrent read/write operations between two processors or controllers. Ensure the design accommodates the specified 2.5V core voltage and LVTTL-compatible I/O levels for reliable signal integrity.

Memory IC Part Context

This part belongs to the 70T3509M series of synchronous dual-port SRAMs manufactured by Renesas Electronics. The series is designed for applications demanding rapid data throughput and low latency, providing a robust solution for complex digital signal processing tasks.

Memory IC Replacement Considerations

The IDT70T3509MS133BPG is listed as an alias for this component. Verify pinout compatibility and electrical parameter alignment before substituting.

70T3509MS133BP70T3509MS133BP

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