70T3509MS133BPGI

Memory IC Overview

The Renesas 70T3509MS133BPGI is a synchronous dual-port static random-access memory (SRAM) device. It features a storage capacity of 36 Mbit organized as 1 M x 36 bits. The component supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates on a single 2.5 V power supply, ranging from 2.4 V to 2.6 V, with a maximum current consumption of 1.37 A. The device utilizes a parallel interface and is housed in a 256-pin CABGA package suitable for surface mount technology. It functions within an industrial temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Dual-port architecture enabling simultaneous independent access to the same memory location by two separate controllers.
• Full synchronous operation on both ports utilizing a single clock signal for data transfer and control.
• Automatic power-down feature controlled by chip enable signals to reduce standby power consumption.
• LVTTL-compatible I/Os allowing flexible voltage selection for core and I/O supplies.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network routers and switches
• Data acquisition systems requiring low-latency read/write cycles
• Industrial automation controllers needing reliable volatile storage

Memory IC Procurement Notes

Verify RoHS compliance status through official manufacturer documentation prior to integration, as environmental certifications may vary by production batch. Confirm moisture sensitivity level (MSL 3) requirements for PCB assembly processes to prevent damage during reflow soldering. Ensure that the specific suffix BPGI matches the required pinout and packaging dimensions for your design. Cross-reference the latest datasheet revision to confirm any updates to electrical characteristics or recommended operating conditions.

Memory IC Selection Notes

Select this component when a high-density 36-bit wide memory interface is required for dual-controller architectures. The 133 MHz speed class suits applications demanding sub-5 ns latency for burst data transfers. Consider the 256-pin CABGA package constraints regarding board space and thermal dissipation capabilities. Verify that the system design can accommodate the 2.5 V core voltage requirement and the associated power delivery network complexity compared to 3.3V alternatives.

Memory IC Part Context

This part belongs to the Renesas 70T3509M series of synchronous dual-port SRAMs. The series is designed for high-performance embedded systems requiring fast, concurrent data access. Similar parts in the family may offer different bit widths or densities but share the same synchronous dual-port operational principles and interface standards.

Memory IC Replacement Considerations

The part number alias IDT70T3509MS133BPGI indicates functional equivalence with IDT-branded versions. Verify pin compatibility and electrical specifications before substituting with other 70T3509 variants, as differences in package type or speed grade may exist.