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70T3509MS133BPI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 36MBIT PAR 256CABGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for 70T3509MS133BPI
- Description：IC SRAM 36MBIT PAR 256CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Dual Port, Synchronous
- Memory Size：36Mbit
- Memory Organization：1M x 36
- Memory Interface：Parallel
- Clock Frequency：133 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：2.4V ~ 2.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：256-BGA
- Supplier Device Package：256-CABGA (17x17)
- Access Time：4.2 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for 70T3509MS133BPI
Memory IC Overview
The Renesas Electronics Corporation 70T3509MS133BPI is a synchronous dual-port static random-access memory (SRAM) device. It features a storage capacity of 36 Mbit organized as 1 Megabit by 36 bits. The component supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 2.4 V to 2.6 V and functions at temperatures between -40°C and +85°C. The device utilizes a parallel interface and is housed in a 256-pin CABGA package.
Memory IC Feature Summary
- Synchronous dual-port architecture enabling simultaneous independent access from two distinct ports.
Memory IC Applications
- High-speed data buffering in network infrastructure equipment
- Cache memory implementation in telecommunications systems
- Data storage for high-performance embedded processing applications
Memory IC Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and electrical characteristics. Confirm moisture sensitivity level requirements and reflow soldering profiles prior to assembly. Ensure the selected variant matches the required operating temperature range and voltage specifications for the target application environment.
Memory IC Selection Notes
Select this component when a high-density, fast-access synchronous dual-port SRAM is required for complex data handling tasks. Consider the 256-pin CABGA package constraints and thermal management needs during system design. Evaluate power consumption metrics relative to the system's overall energy efficiency targets and cooling capabilities.
Memory IC Part Context
This part belongs to the 70T3509M series of synchronous dual-port SRAMs manufactured by Renesas Electronics. These devices are engineered for demanding applications requiring high bandwidth and low latency. The series provides reliable data retention and fast cycle times suitable for modern digital signal processing and communication protocols.
Memory IC Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify that any replacement maintains identical pin configurations, voltage levels, and timing parameters to ensure seamless integration without circuit redesign.
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