70T3519S133BF

Memory IC Overview

The Renesas Electronics Corporation 70T3519S133BF is a synchronous dual-port static random-access memory (SRAM) device. It features a storage organization of 256K x 36 bits, providing a total capacity of 9 Mbit. The component supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a core voltage range of 2.4 V to 2.6 V and utilizes a parallel interface. The device is housed in a 208-pin CABGA package suitable for surface mount technology.

Memory IC Feature Summary

• Dual-port architecture enabling simultaneous independent access to the same memory location by two separate masters.
• Full synchronous operation on both ports utilizing a single clock signal for data transfer control.
• Supports selectable pipelined or flow-through output modes to optimize performance for specific system requirements.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network processing systems
• Data storage in industrial automation controllers

Memory IC Procurement Notes

Verify the exact suffix designation against official Renesas documentation, as variations such as BFI or BFG may indicate differences in packaging or environmental compliance. Confirm moisture sensitivity levels and lead-free status prior to assembly planning. Ensure compatibility with existing board design constraints regarding the 208-pin CABGA footprint and thermal management requirements for the specified operating temperature range.

Memory IC Selection Notes

Select this component when high-bandwidth bidirectional data transfer is required between two processors or logic blocks. The 36-bit word width accommodates error correction code implementations without additional overhead. Consider the 133 MHz speed grade relative to system clock requirements and ensure power supply stability within the 2.4 V to 2.6 V window to maintain timing integrity.

Memory IC Part Context

This part belongs to the Renesas 70T3519 series of synchronous dual-port SRAMs. The series is designed for applications demanding high throughput and low latency. Variants within the family typically share similar architectural features but differ in speed grades, pin counts, or package types to suit diverse integration needs.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify cross-compatibility with IDT-branded equivalents only through official manufacturer substitution guides.