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70T3519S133DR is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.
Memory IC specifications for 70T3519S133DR
- Description：IC SRAM 9MBIT PARALLEL 208PQFP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Dual Port, Synchronous
- Memory Size：9Mbit
- Memory Organization：256K x 36
- Memory Interface：Parallel
- Clock Frequency：133 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：2.4V ~ 2.6V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：208-BFQFP
- Supplier Device Package：208-PQFP (28x28)
- Access Time：4.2 ns
Memory IC datasheet and documents for 70T3519S133DR
Memory IC Overview
The Renesas Electronics Corporation 70T3519S133DR is a 9 Mbit (256 K x 36) dual-port synchronous static random-access memory (SRAM). It operates at a maximum clock frequency of 133 MHz with a 4.2 ns access time. The device utilizes a parallel interface and functions within a 2.4 V to 2.6 V power supply range, drawing a maximum current of 450 mA. It is housed in a 208-pin PQFP package and supports an operating temperature range from -40°C to +85°C.
Memory IC Feature Summary
- Dual-port architecture enabling independent simultaneous access for two masters
- Synchronous operation synchronized to a single clock input
- Wide 36-bit data bus width for high-bandwidth applications
Memory IC Applications
- High-speed networking equipment requiring low-latency buffering
- Telecommunications systems utilizing wide data paths
- Industrial control systems needing reliable synchronous memory
Memory IC Procurement Notes
Verify the specific suffix DR against official Renesas documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status as indicated in current datasheets. Check for end-of-life notices or discontinuance notifications prior to procurement planning.
Memory IC Selection Notes
Select this component when a wide 36-bit data path is required alongside synchronous timing constraints. Ensure the design accommodates the 2.5V nominal voltage and 450 mA maximum current consumption. Verify that the 208-pin PQFP footprint fits the PCB layout constraints.
Memory IC Part Context
This part belongs to the Renesas 70T3519S133 series of dual-port SRAMs. It shares architectural similarities with other members like the 70T3519S133BFI but differs in package configuration. The series targets applications demanding high throughput and deterministic latency in synchronous environments.
Memory IC Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas cross-reference guides for potential alternatives.
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