70T3519S133DRI

Memory IC Overview

The Renesas Electronics Corporation 70T3519S133DRI is a synchronous dual-port static random-access memory (SRAM) device. It features a storage capacity of 9 Mbit organized as 256K x 36 bits. The component supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates on a parallel interface and requires a supply voltage between 2.4 V and 2.6 V. The device is housed in a 208-pin PQFP package and is designed for surface-mount installation.

Memory IC Feature Summary

• Provides independent read/write ports for simultaneous data access
• Supports high-speed synchronous operation via parallel interface
• Designed for industrial temperature range applications

Memory IC Applications

• High-performance networking equipment
• Industrial automation control systems
• Telecommunications infrastructure

Memory IC Procurement Notes

Verify the specific suffix DRI against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm RoHS status and moisture sensitivity level requirements prior to integration. Ensure design-in approval aligns with current manufacturing availability and lifecycle status.

Memory IC Selection Notes

Select this component when dual-port architecture is required for concurrent master-slave operations. The 256K x 36 organization suits wide-data bus applications. Verify that the 133 MHz speed grade meets system timing constraints and that the PQFP-208 footprint fits the PCB layout.

Memory IC Part Context

This part belongs to the 70T3519 series of synchronous dual-port SRAMs from Renesas. The series offers various speed grades and packaging options, including BGA and PQFP variants. The 70T3519S133DRI specifically denotes the 133 MHz performance tier in a leaded plastic quad flat package.

Memory IC Replacement Considerations

Cross-reference with IDT70T3519S133DRI for potential pin-compatible alternatives. Verify electrical specifications and package integrity before substitution.