70T3519S166BF

Memory IC Overview

The Renesas Electronics Corporation 70T3519S166BF is a synchronous dual-port static random-access memory (SRAM) device. It features a storage capacity of 9 Mbit organized as 256K x 36 bits. The component supports a maximum clock frequency of 166 MHz with an access time of 3.6 ns. It operates within a supply voltage range of 2.4 V to 2.6 V and has a maximum power current of 450 mA. The device utilizes a parallel interface and is housed in a 208-CABGA package measuring 15x15 mm. It is rated for commercial operating temperatures from 0°C to +70°C.

Memory IC Feature Summary

• Provides simultaneous independent access to the same memory location via two distinct ports, supporting high-throughput data processing.
• Integrates automatic power-down functionality controlled by chip enable signals to minimize standby power consumption.
• Supports selectable 3.3V or 2.5V I/O levels on each port, allowing flexible voltage compatibility with various system controllers.

Memory IC Applications

• High-speed networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure systems utilizing burst data flows
• Industrial control systems needing reliable synchronous memory interfaces

Memory IC Procurement Notes

Verify the specific suffix BF against official Renesas documentation to confirm the exact package variant and temperature grade. Confirm RoHS compliance status as indicated in the datasheet, noting that lead-free availability may vary by production batch. Check for any active product discontinuance notifications or end-of-life notices prior to finalizing procurement plans.

Memory IC Selection Notes

Select this component when a 256K x 36 organization is required for synchronous dual-port applications. Ensure the design accommodates the 208-CABGA surface-mount package dimensions. Verify that the system logic supports the 166 MHz clock speed and that the 2.4V to 2.6V supply voltage range aligns with the platform's power delivery capabilities.

Memory IC Part Context

This part belongs to the 70T3519 series of high-speed synchronous dual-port SRAMs manufactured by Renesas Electronics. The series is designed for applications demanding unidirectional or bidirectional data flow in bursts. It shares architectural similarities with other members like the 70T3519S133BFI but offers higher clock speeds.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas resources for potential cross-references or updated series replacements.