70T3519S166BFG

Memory IC Overview

The 70T3519S166BFG is a synchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit organized as 256K x 36 bits. The device supports a maximum clock frequency of 166 MHz with an access time of 3.6 ns. It operates on a single 2.5V power supply, with voltage ranging from 2.4V to 2.6V and a maximum current consumption of 450 mA. The component utilizes a parallel interface and is housed in a 208-pin CABGA package measuring 15x15 mm. It functions within a commercial temperature range of 0°C to +70°C.

Memory IC Feature Summary

• Dual-port architecture enabling simultaneous independent access to the same memory location by two separate controllers.
• Full synchronous operation on both ports utilizing a common clock signal for data transfer.
• Selectable output modes including pipelined or flow-through configurations to optimize system timing.
• Integrated JTAG functionality for boundary scan testing and debugging capabilities.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Network switching and routing applications
• Industrial automation control systems
• Embedded computing platforms requiring low-latency memory access

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Check for recent product discontinuance notifications or lifecycle changes. Ensure packaging integrity matches specified tray requirements. Validate pin compatibility and electrical specifications against design schematics before integration.

Memory IC Selection Notes

Select this component when dual-port simultaneous access is required for high-speed data processing. Consider the 2.5V I/O voltage compatibility with target logic levels. Evaluate the 208-pin CABGA package constraints for PCB layout and thermal management. Compare performance metrics against alternative SRAM families if lower latency or different density is needed.

Memory IC Part Context

This part belongs to the 70T3519 series of synchronous dual-port SRAMs. It shares architectural similarities with other members like the 70T3519S133BCI but differs in clock speed and voltage specifications. The series is designed for burst data flow applications. It replaces older generations of asynchronous dual-port memories in modern high-performance embedded designs.

Memory IC Replacement Considerations

The 70T3519S133BCI is documented as a similar replacement option within the same family. Verify pinout compatibility and electrical parameter alignment before substitution. Note that the substitute may operate at a different clock frequency. Confirm availability and lifecycle status for both parts.