Memory IC 70T3519S166DR product image

70T3519S166DR

  • Description:IC SRAM 9MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:e64054d3c20b Category: Brand:

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70T3519S166DR is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T3519S166DR

  • Description:IC SRAM 9MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Synchronous
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-BFQFP
  • Supplier Device Package:208-PQFP (28x28)
  • Access Time:3.6 ns

Memory IC datasheet and documents for 70T3519S166DR

70T3519S166DR

Memory IC Overview

The Renesas Electronics Corporation 70T3519S166DR is a synchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 Mbit, organized as 256K words by 36 bits. The device operates with a maximum clock frequency of 166 MHz and features a typical access time of 3.6 ns. It requires a supply voltage range of 2.4 V to 2.6 V. The component is housed in a 208-pin Plastic Quad Flat Package (PQFP) with dimensions of 28x28 mm. It supports parallel interface communication and is designed for surface-mount installation.

Memory IC Feature Summary

  • Supports simultaneous independent read/write operations at both Port A and Port B without bus contention
  • Utilizes synchronous architecture controlled by a single clock input for precise timing alignment
  • Integrates dedicated write enable controls for each port to manage data integrity independently

Memory IC Applications

  • High-speed network switching fabric buffers
  • Telecommunications protocol processing systems
  • Industrial automation control units requiring deterministic latency

Memory IC Procurement Notes

Verify the specific suffix DR indicates tape and reel packaging configuration against official datasheets. Confirm RoHS compliance status as sources indicate non-compliance. Check for End-of-Life notices or Product Change Notifications regarding manufacturing discontinuation before finalizing procurement plans.

Memory IC Selection Notes

Select this component when dual-port isolation is required for concurrent processor access. Ensure system power supplies strictly maintain the 2.4 V to 2.6 V range to prevent operational instability. Verify that the PCB layout accommodates the 208-PQFP footprint and thermal requirements for sustained high-frequency operation.

Memory IC Part Context

This part belongs to the 70V/70T series of synchronous dual-port SRAMs from Renesas. These devices are engineered for applications demanding high bandwidth and low latency. The series typically offers various speed grades and package options to suit different performance and form factor constraints in embedded systems.

Memory IC Replacement Considerations

Consult official substitution guides for compatible parts within the same family. Verify pin compatibility and electrical specifications before integrating alternative components.

70T3519S166DR70T3519S166DR

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