70T3519S200BC8

Memory IC Overview

The 70T3519S200BC8 is a synchronous dual-port static random access memory manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits organized as 256K words by 36 bits. The device operates with a maximum clock frequency of 200 MHz and supports a parallel interface. Electrical specifications include a supply voltage range of 2.4V to 2.6V and an access time of 3.4 nanoseconds. It is housed in a 256-lead CABGA package measuring 17x17 millimeters. The component is rated for commercial operating temperatures between 0°C and 70°C.

Memory IC Feature Summary

• Supports simultaneous independent read and write operations through two separate ports
• Integrates on-chip hardware arbitration logic for port conflict resolution
• Provides full hardware support for semaphore signaling mechanisms between ports

Memory IC Applications

• High-speed data buffering in telecommunications systems
• Cache memory implementation in network processing equipment
• Data storage in industrial control architectures requiring concurrent access

Memory IC Procurement Notes

This component has reached the end-of-life stage, with discontinuance notifications issued by the manufacturer. Availability is restricted, and sourcing may require verification of existing stock or authorized distributors. Designers should confirm current lifecycle status before procurement attempts due to potential obsolescence risks.

Memory IC Selection Notes

Engineers selecting this part must account for its synchronous dual-port architecture and specific 2.5V power requirements. The 256-CABGA package necessitates appropriate surface-mount assembly capabilities. Verification of RoHS compliance status is required as indicated in documentation. Consideration of the 200 MHz operational limit is essential for timing-critical designs.

Memory IC Part Context

The 70T3519S200BC8 belongs to the 70T3519 series of high-performance dual-port SRAMs. This series is designed for applications demanding high bandwidth and low latency. The device utilizes advanced semiconductor technology to achieve fast access times while maintaining reliable data integrity across multiple simultaneous access cycles.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the end-of-life status, alternative components should be evaluated based on pin compatibility, electrical specifications, and functional equivalence.