Memory IC 70T3539MS133BCI product image

70T3539MS133BCI

$380.05
  • Description:IC SRAM 18MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:bfde311aa697 Category: Brand:

  
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70T3539MS133BCI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PAR 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T3539MS133BCI

  • Description:IC SRAM 18MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Synchronous
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for 70T3539MS133BCI

70T3539MS133BCI

Memory IC Overview

The 70T3539MS133BCI is a high-speed synchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics. It features an organization of 512K x 36 bits, providing a total storage capacity of 18 Mbit. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 2.4 V to 2.6 V and functions reliably across an industrial temperature range from -40°C to +85°C. The component utilizes a parallel interface and is housed in a 256-pin CABGA package.

Memory IC Feature Summary

  • Synchronous dual-port architecture enabling simultaneous independent access to the same memory location for unidirectional or bidirectional data flow bursts.
  • Automatic power-down functionality controlled by chip enables, allowing on-chip circuitry to enter low standby power modes.
  • Supports selectable operating voltages of either 3.3V or 2.5V on one or both ports via OPT pins, while maintaining a 2.5V core supply.

Memory IC Applications

  • Network infrastructure equipment requiring high-bandwidth data buffering
  • Telecommunications systems utilizing burst data processing
  • Industrial control systems needing reliable dual-port memory solutions

Memory IC Procurement Notes

Verify the specific suffix configuration against official Renesas documentation to ensure compatibility with required voltage levels and packaging types. Confirm current production status and moisture sensitivity handling requirements prior to procurement. Cross-reference part numbers with authorized distributors to avoid counterfeit components and ensure traceability throughout the supply chain.

Memory IC Selection Notes

Select this component when designing systems that require high-speed synchronous dual-port memory with 36-bit data width. Ensure the design accommodates the 2.4V to 2.6V supply voltage range and the 256-pin CABGA package constraints. Verify that the application benefits from the automatic power-down features and flexible port voltage options provided by the OPT pin configuration.

Memory IC Part Context

This component belongs to the 70T3539M series of high-speed synchronous dual-port SRAMs. The series is optimized for applications involving rapid data transfer and burst operations. It serves as a critical memory solution in environments demanding low latency and high reliability for data buffering and processing tasks.

Memory IC Replacement Considerations

IDT70T3539MS133BCI is listed as an alias for this part number. Verify functional equivalence and pinout compatibility before substitution. Consult official datasheets for any minor parameter variations between manufacturer designations.

70T3539MS133BCI70T3539MS133BCI
$380.05
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