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70T3539MS133BCI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PAR 256CABGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for 70T3539MS133BCI8
- Description：IC SRAM 18MBIT PAR 256CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Dual Port, Synchronous
- Memory Size：18Mbit
- Memory Organization：512K x 36
- Memory Interface：Parallel
- Clock Frequency：133 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：2.4V ~ 2.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：256-LBGA
- Supplier Device Package：256-CABGA (17x17)
- Access Time：4.2 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for 70T3539MS133BCI8
Memory IC Overview
The 70T3539MS133BCI8 is a synchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics. It features an 18 Mbit storage capacity organized as 512K x 36 bits. The device supports a maximum clock frequency of 133 MHz with a 4.2 ns access time. It operates on a 2.4 V to 2.6 V supply voltage and utilizes a 256-CABGA package.
Memory IC Feature Summary
- Synchronous dual-port architecture enabling simultaneous independent access to memory locations
- High-speed parallel interface supporting burst data flow operations
- Automatic power-down mode controlled by chip enables for low standby power consumption
Memory IC Applications
- Network infrastructure equipment requiring high-bandwidth memory buffering
- Telecommunications systems utilizing synchronous data processing
- Industrial control systems needing fast concurrent read/write capabilities
Memory IC Procurement Notes
Verify component authenticity through authorized distributors due to potential counterfeit risks. Confirm RoHS compliance status as the base model may not meet current environmental standards. Check moisture sensitivity level handling requirements before assembly. Validate lead times as production cycles may vary significantly from standard estimates.
Memory IC Selection Notes
Select this component when synchronous dual-port performance is required for 36-bit wide data buses. Ensure system design accommodates the specific 2.5V core voltage requirement. Consider the 256-ball CABGA package constraints for PCB layout. Verify that the 133 MHz clock speed aligns with system timing requirements.
Memory IC Part Context
This part belongs to the 70T3539M series of high-speed synchronous dual-port SRAMs. It is designed for applications demanding unidirectional or bidirectional data flow in bursts. The series offers optimized power management and flexible I/O voltage options for various system integration needs.
Memory IC Replacement Considerations
IDT70T3539MS133BCI8 is listed as an alias for this component. Verify pin compatibility and electrical specifications before substitution. Ensure the replacement matches the 256-CABGA package dimensions and thermal characteristics.
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