Memory IC 70T3589S133DRI product image

70T3589S133DRI

  • Description:IC SRAM 2MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:95908964b922 Category: Brand:

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70T3589S133DRI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 2MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T3589S133DRI

  • Description:IC SRAM 2MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Synchronous
  • Memory Size:2Mbit
  • Memory Organization:64K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-BFQFP
  • Supplier Device Package:208-PQFP (28x28)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for 70T3589S133DRI

70T3589S133DRI

Memory IC Overview

The Renesas Electronics Corporation 70T3589S133DRI is a 2 Mbit synchronous dual-port static random-access memory (SRAM) integrated circuit. It features a memory organization of 64K x 36 bits and operates with a maximum clock frequency of 133 MHz. The device provides a typical access time of 4.2 ns and functions within a supply voltage range of 2.4 V to 2.6 V. It is housed in a 208-pin PQFP package measuring 28x28 mm, designed for surface-mount installation.

Memory IC Feature Summary

  • Supports simultaneous independent read/write operations at both Port A and Port B for concurrent data processing
  • Utilizes synchronous architecture with a single clock input to manage data transfer timing
  • Integrates dedicated write enable controls for each port to facilitate selective data writing

Memory IC Applications

  • High-speed network routers and switches requiring low-latency packet buffering
  • Telecommunications base stations handling real-time signal processing
  • Industrial automation controllers managing complex motion control tasks

Memory IC Procurement Notes

Verify the specific suffix DRI confirms the 208-PQFP package and 2.4V-2.6V voltage range, as other suffixes may indicate different packages or voltages. Confirm RoHS compliance status and moisture sensitivity level requirements against your manufacturing process specifications before ordering.

Memory IC Selection Notes

Select this component when a system requires true dual-port capability for simultaneous access by two independent masters. Ensure the design supports the 2.4V to 2.6V operating voltage window. Consider the 208-PQFP footprint constraints and thermal dissipation capabilities during the PCB layout phase.

Memory IC Part Context

This part belongs to the 70T3589 series of synchronous dual-port SRAMs from Renesas. The series offers various packaging options and voltage variants to suit different embedded applications. The 70T3589S133DRI specifically targets high-performance computing environments needing fast, reliable memory access.

Memory IC Replacement Considerations

Check for IDT70T3589S133DRI as a potential equivalent under previous branding. Verify pin compatibility and electrical parameters before substituting with other 2Mbit dual-port SRAMs.

70T3589S133DRI70T3589S133DRI

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