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70T3589S133DRI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 2MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 70T3589S133DRI is a 2 Mbit synchronous dual-port static random-access memory (SRAM) integrated circuit. It features a memory organization of 64K x 36 bits and operates with a maximum clock frequency of 133 MHz. The device provides a typical access time of 4.2 ns and functions within a supply voltage range of 2.4 V to 2.6 V. It is housed in a 208-pin PQFP package measuring 28x28 mm, designed for surface-mount installation.
Verify the specific suffix DRI confirms the 208-PQFP package and 2.4V-2.6V voltage range, as other suffixes may indicate different packages or voltages. Confirm RoHS compliance status and moisture sensitivity level requirements against your manufacturing process specifications before ordering.
Select this component when a system requires true dual-port capability for simultaneous access by two independent masters. Ensure the design supports the 2.4V to 2.6V operating voltage window. Consider the 208-PQFP footprint constraints and thermal dissipation capabilities during the PCB layout phase.
This part belongs to the 70T3589 series of synchronous dual-port SRAMs from Renesas. The series offers various packaging options and voltage variants to suit different embedded applications. The 70T3589S133DRI specifically targets high-performance computing environments needing fast, reliable memory access.
Check for IDT70T3589S133DRI as a potential equivalent under previous branding. Verify pin compatibility and electrical parameters before substituting with other 2Mbit dual-port SRAMs.
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