70T3589S133DRI8

Memory IC Overview

The Renesas Electronics Corporation 70T3589S133DRI8 is a high-speed synchronous dual-port static random-access memory (SRAM) device. It features a storage organization of 64K words by 36 bits, providing a total capacity of 2 Mbit. The component supports an I/O frequency of 133 MHz and offers a fast access time of 4.2 ns. It operates with core voltages of 2.5V or 3.3V LVTTL levels. The device is housed in a 208-lead CABGA package measuring 15.0 x 15.0 mm. It includes advanced functions such as collision detection, counters, dual clocks, interrupts, JTAG support, and sleep mode capabilities.

Memory IC Feature Summary

• Supports simultaneous independent access from two ports for concurrent data operations.
• Integrates collision detection logic to manage simultaneous access conflicts between ports.
• Includes built-in counters and interrupt generation capabilities for system monitoring.
• Features JTAG interface support for boundary scan testing and debugging.

Memory IC Applications

• High-performance networking equipment requiring low-latency packet buffering.
• Telecommunications systems utilizing real-time signal processing.
• Industrial automation controllers needing rapid data acquisition.
• Embedded systems requiring reliable volatile memory for active processes.

Memory IC Procurement Notes

Verify the specific suffix 'DRI8' against official Renesas documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status as some variants may differ. Check for end-of-life notifications or discontinuance notices prior to procurement. Ensure supply chain sources provide valid traceability for this discontinued series.

Memory IC Selection Notes

Select this component when dual-port architecture with 36-bit width is required for parallel processing applications. Consider the 133 MHz speed and 4.2 ns access time for high-throughput data handling needs. Evaluate the 208-lead CABGA package constraints for PCB layout. Verify voltage compatibility with 2.5V or 3.3V logic interfaces in the target design.

Memory IC Part Context

This part belongs to the 70T3589 family of synchronous dual-port SRAMs. It shares architectural similarities with other members like the 70T3589S133BC8 but differs in packaging and specific electrical characteristics. The family is designed for applications demanding high-speed, non-blocking memory access between multiple processors or buses.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas technical support for current alternatives within the 70T3589 series or newer generations. Verify pinout and electrical parameter compatibility before considering any cross-reference components.