70T3589S166DR

Memory IC Overview

The Renesas Electronics 70T3589S166DR is a synchronous dual-port static random access memory (SRAM) device. It features a storage capacity of 2 Mbit organized as 64K x 36 bits. The component supports a maximum clock frequency of 166 MHz with an access time of 3.6 ns. It operates on a 2.5V power supply, ranging from 2.4V to 2.6V. The device utilizes a parallel interface and is housed in a 208-pin CABGA package measuring 15x15 mm. It functions within a temperature range of 0°C to +70°C.

Memory IC Feature Summary

• Provides simultaneous independent read/write operations at both Port A and Port B for high-throughput data handling.
• Integrates collision detection logic to manage simultaneous access conflicts between the two ports.
• Supports interleaved I/O architecture to optimize data transfer efficiency.
• Includes dedicated sleep mode functionality to reduce power consumption during idle periods.

Memory IC Applications

• High-speed networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure systems
• Industrial automation control units
• Embedded processing systems

Memory IC Procurement Notes

This component is officially discontinued by the manufacturer. Verify availability through authorized distributors or secondary market suppliers. Confirm moisture sensitivity level (MSL 3) and lead-free status prior to procurement. Ensure compatibility with existing PCB footprints and voltage requirements before finalizing acquisition.

Memory IC Selection Notes

Select this part for applications requiring fast synchronous dual-port memory with 36-bit word width. Compare against the 70V3589 series for 3.3V operation variants. Consider the 70T3589S133 variant if lower clock speeds suffice. Evaluate package constraints as the CABGA form factor requires specific surface-mount assembly capabilities.

Memory IC Part Context

The 70T3589 belongs to the 70T3589 family of high-performance synchronous dual-port SRAMs. This series is designed for demanding embedded applications needing concurrent port access. The device represents a transition point in Renesas' memory portfolio, succeeding earlier IDT-branded components while maintaining architectural compatibility.

Memory IC Replacement Considerations

Official substitutes include the 70T3589S133BFI8 for lower speed requirements. Cross-reference the 70V3589S166DRG8 for 3.3V compatible designs. Verify pinout and electrical specifications against legacy IDT70T3589 equivalents when migrating existing hardware platforms.