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70T3589S166DR8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 2MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 70T3589S166DR8 is a high-speed synchronous dual-port static random-access memory (SRAM) integrated circuit. It features a storage capacity of 2 Mbit organized as 64K x 36 bits. The device supports parallel interface operations with a maximum clock frequency of 166 MHz and an access time of 3.6 ns. It operates within a supply voltage range of 3.15V to 3.45V and is housed in a 208-pin BGA package.
Verify the specific suffix DR8 against official manufacturer documentation, as standard listings often reference the DR variant. Confirm RoHS compliance status and lead-free requirements prior to procurement. Check for active End-of-Life notices or product discontinuance announcements from Renesas Electronics to ensure long-term availability for production cycles.
Select this component when designing systems requiring high-bandwidth dual-port memory with strict timing constraints. Ensure the design accommodates the 3.3V power supply specifications and the thermal characteristics of the 208-pin BGA package. Verify that the host system supports the required 166 MHz clock speed and parallel interface protocols for optimal performance.
This part belongs to the 70T3589 series of synchronous dual-port SRAMs manufactured by Renesas Electronics. The series is engineered for applications demanding high throughput and low latency. The 70T3589 family typically offers various speed grades and packaging options to suit different performance and form-factor requirements in embedded memory solutions.
Consult official Renesas cross-reference guides for verified substitutes. Potential alternatives may include other members of the 70T3589 series with compatible pinouts and electrical characteristics.
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