70T3589S200BC

Memory IC Overview

The Renesas Electronics Corporation 70T3589S200BC is a high-speed synchronous dual-port static random-access memory (SRAM) device. It features a storage capacity of 2 Mbit organized as 64K words by 36 bits. The component supports a maximum clock frequency of 200 MHz with an access time of 3.4 ns. It operates on a 2.5V supply voltage and utilizes a parallel interface. The device is housed in a 256-lead CABGA package measuring 17x17 mm, designed for surface mount installation.

Memory IC Feature Summary

• Provides simultaneous independent read/write access to two distinct masters via dual-port architecture
• Supports high-frequency operation up to 200 MHz for rapid data throughput
• Integrates collision detection logic to manage concurrent access conflicts between ports
• Features interleaved I/O structure to optimize signal integrity at high speeds

Memory IC Applications

• High-performance networking equipment requiring low-latency packet buffering
• Telecommunications systems utilizing DSP-based signal processing
• Industrial automation controllers needing fast local data caching
• Test and measurement instruments requiring rapid waveform data acquisition

Memory IC Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Confirm RoHS compliance status as legacy variants may differ. Check for active production status or end-of-life notices prior to procurement. Ensure moisture sensitivity level handling procedures are followed during assembly.

Memory IC Selection Notes

Select this component when a system requires simultaneous bidirectional data access without bus contention. The 36-bit word width suits error-correction code applications. Verify that the 200 MHz speed grade meets the target system's timing requirements. Ensure the PCB layout accommodates the 256-lead BGA package dimensions and thermal constraints.

Memory IC Part Context

This part belongs to the 70T3589 series of synchronous dual-port SRAMs. The series is characterized by high-speed operation and flexible I/O configurations. It serves as a critical memory solution for applications demanding deterministic access times and high bandwidth. The technology represents a standard for high-performance embedded memory in complex digital systems.

Memory IC Replacement Considerations

Consult official substitution lists for equivalent parts from IDT or Renesas. Verify that any substitute maintains the 64K x 36 organization and 2.5V core voltage. Ensure the replacement package matches the 256-CABGA footprint for mechanical compatibility.