70T3599S133BFI8

Memory IC Overview

The Renesas 70T3599S133BFI8 is a dual-port synchronous static random-access memory (SRAM) device. It features a storage capacity of 4 Mbit organized as 128K words by 36 bits. The component operates with a maximum clock frequency of 133 MHz and supports a maximum access time of 4.2 ns. It functions within a supply voltage range of 2.4 V to 2.6 V. The device utilizes a parallel interface and is housed in a 256-pin CABGA package.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access for two processors
• Synchronous operation synchronized to a single clock input
• High-speed data transfer capabilities via parallel interface

Memory IC Applications

• Network routing and switching equipment
• Telecommunications infrastructure systems
• Industrial automation control units

Memory IC Procurement Notes

Verify the specific suffix BFI8 against official documentation to confirm packaging format, as variations exist within the series. Confirm RoHS compliance status directly with the manufacturer, as some variants may not meet current environmental standards. Check for active production status or end-of-life notifications prior to procurement planning.

Memory IC Selection Notes

Select this component when high-speed dual-port memory is required for network applications. Ensure the design accommodates the 2.5V power supply requirement and the 256-pin CABGA footprint. Verify that the system timing constraints align with the specified 4.2 ns access time and 133 MHz clock frequency limits.

Memory IC Part Context

This part belongs to the 70T3599S133 family of synchronous dual-port SRAMs manufactured by Renesas Electronics. These devices are designed for high-performance networking and telecommunications applications requiring fast data throughput and reliable memory access.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.