Memory IC 70T631S10BCI product image

70T631S10BCI

$189.86
  • Description:IC SRAM 4.5MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:299ca0adeb1c Category: Brand:

  
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70T631S10BCI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T631S10BCI

  • Description:IC SRAM 4.5MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:4.5Mbit
  • Memory Organization:256K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T631S10BCI

70T631S10BCI

Memory IC Overview

The 70T631S10BCI is a dual-port, asynchronous SRAM IC manufactured by Renesas Electronics Corporation. It offers a storage capacity of 4.5 Mbit organized as 256K x 18 bits. The device features a parallel interface with a maximum access time of 10 ns. It operates on a standardized 2.5 V power supply and is housed in a 256-CABGA (17x17) surface-mount package.

Memory IC Feature Summary

  • Dual-port architecture enabling independent simultaneous access to memory data
  • Asynchronous operation for flexible system integration without clock synchronization constraints
  • Standardized 2.5 V power supply compatibility for diverse electronic applications

Memory IC Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in embedded processing systems
  • Data storage in industrial control units requiring fast random access

Memory IC Procurement Notes

Verify the specific suffix 'I' indicates industrial temperature range compliance when sourcing replacements. Confirm package marking and date codes against current production status. Ensure ESD handling protocols are followed during installation due to CMOS sensitivity. Cross-reference RoHS status if environmental compliance is mandatory for the target assembly.

Memory IC Selection Notes

Select this component when dual-port functionality is required for concurrent read/write operations between two masters. The 10 ns speed suits high-frequency bus architectures. The 2.5 V voltage level matches low-power logic families. Consider the 256-pin BGA footprint for PCB layout constraints and thermal management requirements during the design phase.

Memory IC Part Context

This part belongs to the 70T631 series of high-speed static random-access memories. It is designed for applications demanding rapid data retrieval and bidirectional data flow. The series supports various organization sizes within the same pin-compatible family, facilitating scalable memory design upgrades.

Memory IC Replacement Considerations

Check for IDT70T631S10BCI as a potential equivalent from prior manufacturing lines. Verify pinout compatibility before substitution. Ensure the replacement supports the same 2.5 V operating voltage and 10 ns access speed specifications.

70T631S10BCI70T631S10BCI
$189.86
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