70T631S10BF8

Memory IC Overview

The 70T631S10BF8 is a dual-port static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Mbit, organized as 256K words by 18 bits. The device features an asynchronous parallel interface with a maximum access time of 10 ns. It operates within a supply voltage range of 3.15 V to 3.45 V and supports surface-mount installation in a 128-TQFP package measuring 14x20 mm. The component is rated for commercial operating temperatures between 0°C and 70°C.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on separate ports
• Asynchronous parallel interface supporting high-speed data transfer without clock synchronization
• Volatile memory technology maintaining stored data only during active power supply

Memory IC Applications

• High-performance embedded systems requiring fast local data buffering
• Industrial control units needing reliable temporary data storage
• Communication equipment utilizing parallel data processing interfaces

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to potential counterfeit risks. Confirm RoHS compliance status as the specific variant may not meet current environmental regulations. Check for end-of-life notices or obsolescence warnings before finalizing procurement plans. Ensure packaging specifications match assembly requirements for the 128-TQFP form factor.

Memory IC Selection Notes

Select this component when dual-port functionality is required for concurrent data handling. Consider the 18-bit word width for applications needing wide data buses. Evaluate the 10 ns access speed against system timing constraints. Verify that the 3.3 V nominal supply voltage aligns with the target platform's power distribution network.

Memory IC Part Context

This part belongs to the 70T631 series of dual-port SRAMs from Renesas. The series offers various access speeds and package options to suit different performance and space requirements. These devices are designed for applications demanding high bandwidth and low latency memory solutions.

Memory IC Replacement Considerations

Check for direct pin-compatible replacements within the same series. Verify electrical parameters such as access time and voltage ranges match original specifications. Ensure package dimensions and pin counts are identical for board compatibility.