Memory IC 70T631S12BCI product image

70T631S12BCI

$180.79
  • Description:IC SRAM 4.5MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:115f5259aa6b Category: Brand:

  
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70T631S12BCI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T631S12BCI

  • Description:IC SRAM 4.5MBIT PAR 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:4.5Mbit
  • Memory Organization:256K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T631S12BCI

70T631S12BCI

Memory IC Overview

The 70T631S12BCI is a dual-port static random-access memory (SRAM) device manufactured by Renesas Electronics. It features a storage organization of 256K words by 18 bits, resulting in a total capacity of 4.5 Mbit. The component operates with a maximum access time of 12 ns and supports parallel interface communication. It is designed for standard power applications with a supply voltage range of 2.4 V to 2.6 V. The device is housed in a 256-pin CABGA package suitable for surface-mount technology.

Memory IC Feature Summary

  • Dual-port architecture enabling independent simultaneous access from two distinct processors or systems.
  • Asynchronous operation allowing flexible timing integration without external clock synchronization requirements.
  • Standard power consumption profile optimized for general-purpose embedded memory applications.

Memory IC Applications

  • Data buffering in telecommunications equipment
  • Cache memory implementation in industrial control systems
  • FIFO buffer management in network routers

Memory IC Procurement Notes

Verify RoHS compliance status as the source indicates non-compliance. Confirm moisture sensitivity level handling procedures during assembly. Check for end-of-life notifications or discontinuance alerts prior to final design approval. Ensure supplier documentation matches the specific suffix configuration for packaging and pinout verification.

Memory IC Selection Notes

Select this component when independent read/write access from two masters is required within a 2.5V logic environment. Consider the 256-pin CABGA footprint constraints and thermal dissipation capabilities. Evaluate if the 12 ns access speed meets system latency requirements compared to faster asynchronous alternatives.

Memory IC Part Context

This part belongs to the 70T631 series of dual-port SRAMs from Renesas. It serves as a high-speed memory solution for applications requiring concurrent data access. The series typically offers various access times and voltage options to suit different performance and power profiles in embedded systems.

Memory IC Replacement Considerations

IDT70T631S12BCI is listed as an alias for this component. Verify electrical compatibility and pinout equivalence before substitution. No other direct replacements are confirmed in the provided data.

70T631S12BCI70T631S12BCI
$180.79
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