70T631S12BCI8

Memory IC Overview

The 70T631S12BCI8 is a dual-port static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a memory organization of 256K words by 18 bits, providing a total capacity of 4.5 Mbit. The device operates with a standard power supply voltage of 2.5V and supports an asynchronous parallel interface. It offers a maximum access time of 12 ns and is housed in a 256-ball CABGA package measuring 17x17 mm. The component is designed for industrial temperature ranges.

Memory IC Feature Summary

• Dual-port architecture enabling simultaneous independent access to the same memory location from two separate ports.
• Asynchronous operation allowing flexible timing control without reliance on a system clock signal.
• Integrated power-down functionality via chip enables to reduce standby power consumption during idle periods.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data storage in industrial automation controllers

Memory IC Procurement Notes

Verify current availability status as this component may be subject to discontinuation notices. Confirm RoHS compliance requirements, as specific variants may not meet current environmental standards. Ensure the 256-CABGA footprint matches the target PCB design. Validate that the 2.5V core voltage aligns with the system power architecture before finalizing procurement plans.

Memory IC Selection Notes

Select this component when a high-density dual-port SRAM with 18-bit word width is required. The 12 ns access speed suits applications needing rapid data exchange between processors. Consider the 2.5V operating voltage for compatibility with low-power logic families. The 256-ball BGA package is suitable for high-pin-count designs requiring compact surface-mount integration.

Memory IC Part Context

This part belongs to the 70T631 series of dual-port SRAMs from Renesas. It shares architectural similarities with other members like the 70V631S12BCI8 but differs in supply voltage specifications. The series is designed for applications requiring concurrent read/write operations across two distinct interfaces within a single silicon die.

Memory IC Replacement Considerations

Check for official substitute part numbers provided in Renesas product change notifications. Verify pinout and electrical parameter compatibility before substituting. Note that suffix changes may indicate packaging or labeling updates rather than functional differences.