Memory IC 70T633S10BCI product image

70T633S10BCI

$243.18
  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:1d2d098fe7aa Category: Brand:

  
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70T633S10BCI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S10BCI

  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T633S10BCI

70T633S10BCI

Memory IC Overview

The Renesas Electronics Corporation 70T633S10BCI is a dual-port static random-access memory (SRAM) device with a storage capacity of 9 Mbit, organized as 512 k x 18. It operates within a voltage range of 2.4 V to 2.6 V and features an asynchronous parallel interface with a maximum access time of 10 ns. The component supports single data rate (SDR) operations and is housed in a 256-pin CABGA package suitable for surface-mount technology. It functions reliably across an industrial temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Dual-port architecture enabling independent simultaneous read/write operations on separate ports
  • Asynchronous parallel interface supporting standard power operation at 2.5V nominal supply
  • High-speed data access with 10 ns maximum access time for efficient system integration

Memory IC Applications

  • Network infrastructure equipment requiring high-bandwidth memory buffering
  • Telecommunications systems utilizing fast data processing and storage
  • Industrial control systems needing reliable volatile memory solutions

Memory IC Procurement Notes

Verify the specific suffix 'I' indicates the extended temperature grade (-40°C to +85°C) compared to commercial variants. Confirm RoHS compliance status as documentation may indicate non-compliance depending on manufacturing date. Check humidity sensitivity level requirements for proper handling during assembly. Ensure the 256-CABGA footprint matches the target PCB design constraints.

Memory IC Selection Notes

Select this component when dual-port functionality is required for concurrent data access without arbitration delays. The 10 ns speed class suits applications demanding rapid data throughput. Consider the 256-pin CABGA package for high-density board layouts. Verify that the 2.4V to 2.6V operating voltage aligns with the system power rail specifications.

Memory IC Part Context

This part belongs to the 70T633 series of dual-port SRAMs from Renesas Electronics. It serves as a successor or alternative to older IDT-branded parts like the IDT70T633S10BCI. The series provides high-performance memory solutions for networking and telecom applications where low latency and high reliability are critical.

Memory IC Replacement Considerations

The 70T633S10BC is listed as obsolete with the 70T633S10BCI identified as a similar replacement. Verify pinout compatibility and electrical parameter alignment before substitution.

70T633S10BCI70T633S10BCI
$243.18
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