70T633S10BCI8

Memory IC Overview

The Renesas Electronics Corporation 70T633S10BCI8 is a high-speed asynchronous dual-port static random-access memory (SRAM) device. It features a storage organization of 512K x 18 bits, providing a total capacity of 9 Mbit. The component supports a maximum access time of 10 ns and operates with a parallel interface. It requires a single power supply voltage ranging from 2.4 V to 2.6 V. The device is housed in a 256-ball CABGA package measuring 17x17 mm. It is designed for industrial temperature ranges spanning from -40°C to +85°C.

Memory IC Feature Summary

• Dual-port architecture enables simultaneous independent access to the same memory location by two separate ports.
• Asynchronous operation allows flexible timing control without reliance on a global clock signal.
• Integrated hardware support for semaphore signaling facilitates efficient inter-port communication and synchronization.

Memory IC Applications

• High-performance networking equipment requiring low-latency data buffering
• Industrial automation systems needing reliable concurrent data processing
• Telecommunications infrastructure utilizing fast memory caching

Memory IC Procurement Notes

Verify the specific suffix 'I8' against official Renesas documentation to confirm package and moisture sensitivity details. Ensure compatibility with existing board designs regarding the 256-ball CABGA footprint. Confirm RoHS status as indicated in current datasheets. Validate lead times and availability directly with authorized distributors due to potential supply chain variations.

Memory IC Selection Notes

Select this component when simultaneous bidirectional data access is required without external arbitration logic. The 10 ns access speed suits applications demanding rapid data retrieval. The 512K x 18 organization provides wide data paths suitable for complex processing tasks. Consider the industrial temperature range if operating in harsh environments.

Memory IC Part Context

This part belongs to the Renesas 70T633 series of dual-port SRAMs. It shares architectural similarities with other members like the 70T633S10BCI but may differ in packaging or environmental ratings. The series is designed for applications requiring high-speed, non-volatile-like performance with true dual-port independence.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas technical support for verified alternatives if discontinuation occurs.