70T633S10BF

Memory IC Overview

The 70T633S10BF is a dual-port static random access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 Mbit organized as 512K x 18 bits. The device utilizes a parallel interface with an access time of 10 ns. It operates within a supply voltage range of 2.4 V to 2.6 V and is housed in a 208-CABGA package measuring 15x15 mm.

Memory IC Feature Summary

• Dual-port asynchronous architecture enabling independent simultaneous access from two separate ports.

Memory IC Applications

• High-speed data buffering in telecommunications systems
• Cache memory implementation in embedded processing units
• Data acquisition systems requiring rapid parallel read/write operations

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status, as documentation indicates non-compliance for this specific part number. Check for moisture sensitivity level requirements during handling and storage to prevent damage prior to soldering.

Memory IC Selection Notes

Select this component when a 9 Mbit dual-port SRAM with 10 ns access speed is required. Ensure the design accommodates the 2.4 V to 2.6 V operating voltage range. Verify that the 208-CABGA footprint fits the PCB layout constraints. Note that this specific suffix variant is discontinued; consider updated alternatives if long-term availability is critical.

Memory IC Part Context

This part belongs to the 70T633 series of dual-port SRAMs from Renesas. The series is designed for applications needing high-performance memory with independent port access. The 70T633S10BF specifically denotes the 10 ns speed grade and 208-pin CABGA package configuration within this product family.

Memory IC Replacement Considerations

The 70T633S12BFI is listed as a similar replacement option by the manufacturer. Verify pin compatibility and electrical specifications before substitution.