Memory IC 70T633S10BF8 product image

70T633S10BF8

$208.29
  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:5fa343543fdb Category: Brand:

  
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70T633S10BF8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S10BF8

  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T633S10BF8

70T633S10BF8

Memory IC Overview

The Renesas Electronics Corporation 70T633S10BF8 is a dual-port static random-access memory (SRAM) device with a total storage capacity of 9 Mbit. The memory organization is structured as 512K words by 18 bits, utilizing an asynchronous parallel interface. It features a maximum access time of 10 ns and operates within a supply voltage range of 2.4 V to 2.6 V. The component is housed in a 208-pin CABGA package measuring 15x15 mm. It supports an industrial operating temperature range from -40°C to +85°C and includes humidity sensitivity classification.

Memory IC Feature Summary

  • Dual-port architecture enables simultaneous independent access to the same memory location by two separate controllers.
  • RapidWrite Mode simplifies high-speed consecutive write cycles for improved throughput efficiency.
  • Asynchronous operation provides flexible timing control without requiring a global clock signal.

Memory IC Applications

  • High-performance networking equipment requiring low-latency data buffering
  • Industrial automation systems needing reliable dual-controller data exchange
  • Telecommunications infrastructure supporting synchronous data rate conversion

Memory IC Procurement Notes

Verify RoHS compliance status carefully, as documentation indicates potential non-compliance for specific variants. Confirm moisture sensitivity level (MSL 4) handling requirements during assembly. Check for active product change notices regarding labeling or packaging updates. Ensure the specific suffix BF8 matches the required tape-and-reel configuration rather than tray packaging. Validate lead times due to reported long delivery periods for this component family.

Memory IC Selection Notes

Select this part when simultaneous read/write access to shared memory is critical for system architecture. Compare against single-port alternatives if only one master controller is present. Consider the 18-bit word width for applications requiring error correction code integration without additional logic overhead. Evaluate power consumption specifications against thermal constraints in enclosed industrial enclosures.

Memory IC Part Context

This component belongs to the 70T633 series of dual-port SRAMs manufactured by Renesas Electronics. It serves as a successor or variant to earlier IDT-branded versions, maintaining pin compatibility and functional equivalence. The series is designed for high-speed data processing applications where deterministic access times are essential for system stability and performance.

Memory IC Replacement Considerations

The 70T633S12BFI is documented as a similar replacement option within the same manufacturer lineup. Verify that the increased 12 ns access time meets system timing requirements before substitution. Confirm package compatibility and electrical parameter alignment for direct pin-to-pin integration.

70T633S10BF870T633S10BF8
$208.29
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