Memory IC 70T633S10BFG8 product image

70T633S10BFG8

$111.49
  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:a2a16bb26eee Category: Brand:

  
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70T633S10BFG8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S10BFG8

  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T633S10BFG8

70T633S10BFG8

Memory IC Overview

The Renesas 70T633S10BFG8 is a high-speed asynchronous dual-port static random-access memory (SRAM) with a total storage capacity of 9 Mbit. The memory organization is structured as 512K words by 18 bits, supporting parallel interface operations. It features a maximum access time of 10 ns and operates within a supply voltage range of 2.4 V to 2.6 V. The component is housed in a 208-CABGA package measuring 15x15 mm and supports surface-mount installation. It is designed for commercial applications with an operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • True dual-port architecture enabling simultaneous independent access to the same memory location by two separate ports.

Memory IC Applications

  • Stand-alone dual-port RAM implementations
  • High-speed data buffering in communication systems
  • Cache memory in embedded processing architectures

Memory IC Procurement Notes

Verify the specific suffix BFG8 against official Renesas documentation to confirm pinout compatibility and electrical specifications. Ensure that the 208-CABGA package dimensions align with your PCB footprint requirements. Confirm RoHS compliance status and moisture sensitivity level prior to assembly planning. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.

Memory IC Selection Notes

Select this component when simultaneous read/write access to shared memory is required without external arbitration logic. The 10 ns speed grade suits high-frequency asynchronous interfaces. Consider the 18-bit word width for error correction code integration or wide data bus applications. Evaluate power consumption limits against the 2.4V to 2.6V supply capability.

Memory IC Part Context

This device belongs to the 70T633 series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades including 10 ns, 12 ns, and 15 ns options. These devices are engineered for applications requiring high bandwidth and low latency between two independent processors or system buses sharing a common memory pool.

Memory IC Replacement Considerations

Check for IDT70T633S10BFG8 equivalents. Verify pin-to-pin compatibility and electrical parameters before substitution.

70T633S10BFG870T633S10BFG8
$111.49
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