70T633S10BFI

Memory IC Overview

The Renesas Electronics Corporation 70T633S10BFI is a static random access memory device with a storage capacity of 9 Mbit. It features an organization of 512 k x 18 and operates at an access time of 10 ns. The interface type is parallel, and it functions as an asynchronous dual-port RAM. The power supply voltage ranges from a minimum of 2.4 V to a maximum of 2.6 V. The maximum power current is 445 mA. The component supports surface mount installation in a CABGA-256 package. It operates within a temperature range of -40 C to +85 C.

Memory IC Feature Summary

• Dual-port architecture enabling simultaneous independent access to the same memory location by two separate controllers.
• Asynchronous operation mode allowing flexible timing control without reliance on a global clock signal.
• Supports standard low-voltage logic levels for seamless integration into diverse digital systems.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data storage in industrial automation controllers

Memory IC Procurement Notes

Verify the specific suffix BFI against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Ensure that the procurement channel provides valid traceability records. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as regulatory requirements may vary by region and production batch. Check for any recent product change notices affecting this part number.

Memory IC Selection Notes

Select this component when a system requires independent read/write access to shared memory resources without external arbitration logic. The asynchronous nature simplifies timing constraints compared to synchronous alternatives. Verify that the 2.5V operating voltage aligns with the target system's power rails. Consider the CABGA-256 package size for PCB layout constraints and thermal management requirements during the design phase.

Memory IC Part Context

This component belongs to the 70T633 series of dual-port SRAMs manufactured by Renesas Electronics. The series is designed for applications requiring high-speed data transfer between two independent processors or buses. It represents a specialized memory solution distinct from single-port SRAMs, offering enhanced throughput capabilities through concurrent port operations.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas documentation for potential obsolescence notices or recommended upgrades.