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70T633S10BFI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for 70T633S10BFI8
- Description：IC SRAM 9MBIT PARALLEL 208CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Dual Port, Asynchronous
- Memory Size：9Mbit
- Memory Organization：512K x 18
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：10ns
- Voltage - Supply：2.4V ~ 2.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：208-LFBGA
- Supplier Device Package：208-CABGA (15x15)
- Access Time：10 ns
Memory IC datasheet and documents for 70T633S10BFI8
Memory IC Overview
The Renesas Electronics Corporation 70T633S10BFI8 is a 9 Mbit (512K x 18) asynchronous dual-port static random-access memory. It operates within a supply voltage range of 2.4 V to 2.6 V and features a maximum access time of 10 ns. The device utilizes a parallel interface and is housed in a 208-pin CABGA package with dimensions of 15x15 mm. It supports an operating temperature range from -40°C to +85°C.
Memory IC Feature Summary
- Dual-port architecture enabling independent simultaneous access by two masters
- Asynchronous operation for flexible system integration
- Industrial-grade wide temperature range support
Memory IC Applications
- High-speed data buffering in telecommunications equipment
- Network switch and router packet storage
- Embedded systems requiring concurrent read/write operations
Memory IC Procurement Notes
Verify the specific suffix BFI8 against official Renesas documentation to confirm pinout, packaging, and electrical characteristics match your design requirements. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Check for active production status or obsolescence notices directly from the manufacturer.
Memory IC Selection Notes
Select this component when a 9 Mbit capacity with 18-bit word width is required. Ensure the design accommodates the 2.4 V to 2.6 V supply voltage constraints. Verify that the 10 ns access time meets the system timing requirements and that the 208-CABGA package fits the PCB layout constraints.
Memory IC Part Context
This part belongs to the Renesas 70T633 series of high-performance asynchronous dual-port SRAMs. These devices are designed for applications demanding high bandwidth and low latency. The series typically offers various speed grades and packaging options to suit different performance and form factor needs.
Memory IC Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Cross-reference specifications such as access time, organization, and package type carefully.
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