70T633S12BC

$213.66

Description：IC SRAM 9MBIT PARALLEL 256CABGA
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray

SKU:155cd2ce66d7 Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

70T633S12BC is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S12BC

Description：IC SRAM 9MBIT PARALLEL 256CABGA
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Dual Port, Asynchronous
Memory Size：9Mbit
Memory Organization：512K x 18
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：12ns
Voltage - Supply：2.4V ~ 2.6V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：Surface Mount
Package / Case：256-LBGA
Supplier Device Package：256-CABGA (17x17)
Access Time：12 ns

Memory IC datasheet and documents for 70T633S12BC

70T633S12BC

Memory IC Overview

The Renesas Electronics Corporation 70T633S12BC is a 9 Mbit dual-port static random-access memory (SRAM) organized as 512K x 18. It features asynchronous parallel interface with a maximum access time of 10 ns. The device operates on a single 2.5 V power supply, ranging from 2.4 V to 2.6 V. It is housed in a 256-pin CABGA package measuring 17x17 mm and supports surface mount installation. The component is designed for industrial temperature ranges, specifically 0°C to +70°C.

Memory IC Feature Summary

Dual-port architecture enables simultaneous independent access to the same memory location by two separate ports.
Asynchronous operation allows flexible timing control without requiring an external clock signal.
Integrated semaphore signaling provides hardware support for managing port contention and data integrity.

Memory IC Applications

High-speed data buffering in telecommunications equipment
Cache memory implementation in embedded processing systems
Data storage in industrial automation controllers

Memory IC Procurement Notes

Verify RoHS compliance status as documentation indicates non-compliance. Confirm moisture sensitivity level (MSL 3) handling requirements during assembly. Check for end-of-life notifications or discontinuance notices prior to final design approval. Ensure voltage supply stability within the specified 2.4V to 2.6V range to maintain reliable operation.

Memory IC Selection Notes

Select this component when a high-density 9 Mbit dual-port SRAM with 10 ns access speed is required. The 256-CABGA package suits applications needing robust surface-mount connectivity. Verify that the 0°C to +70°C operating temperature range meets environmental constraints. Consider the single 2.5V core voltage requirement for power budgeting.

Memory IC Part Context

This part belongs to the 70T633 series of dual-port SRAMs from Renesas Electronics. It shares architectural similarities with other variants like the 70T633S12BFI but differs in package type and specific electrical characteristics. The series is designed for applications requiring high-speed concurrent data access between two independent bus masters.