70T633S12BC8

Memory IC Overview

The Renesas Electronics Corporation 70T633S12BC8 is a dual-port static random access memory (SRAM) device. It features a storage capacity of 9 Mbit with an organization of 512K x 18 bits. The component supports parallel interface communication and provides an access time of 12 ns. It operates within a supply voltage range of 2.4 V to 2.6 V. The device is designed for surface mount installation in a CABGA-256 package. It functions asynchronously and supports standard power operation at 2.5 V.

Memory IC Feature Summary

• Dual-port architecture enabling simultaneous independent access to shared memory locations by two separate ports.
• Asynchronous operation mode allowing flexible timing control without reliance on a global clock signal.
• Integrated hardware support for semaphore signaling to manage port contention and data integrity.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in industrial automation controllers
• Data logging systems requiring rapid write cycle capabilities

Memory IC Procurement Notes

Verify the specific suffix BC8 against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm moisture sensitivity level requirements before assembly. Check for RoHS compliance status as indicated in current datasheets. Ensure EOL or discontinuation notices are reviewed prior to final design approval.

Memory IC Selection Notes

Select this component when simultaneous bidirectional data access is required for high-throughput applications. The 12 ns access speed suits systems needing fast response times. Verify that the 256-ball CABGA package fits the available PCB real estate. Ensure the 2.5V core voltage aligns with the system power distribution network.

Memory IC Part Context

This part belongs to the 70T633 series of dual-port SRAMs from Renesas Electronics. The series is characterized by high-speed asynchronous operation and robust contention management features. These devices are engineered for demanding embedded environments where reliable, concurrent data handling is critical for system performance.

Memory IC Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical specifications carefully. Generic equivalents may lack the specific semaphore signaling or dual-port synchronization features of the original component.