Memory IC 70T633S12BCI product image

70T633S12BCI

$235.03
  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:e4df1c9d861f Category: Brand:

  
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70T633S12BCI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S12BCI

  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T633S12BCI

70T633S12BCI

Memory IC Overview

The 70T633S12BCI is a 9 Mbit (512K x 18) asynchronous dual-port static RAM manufactured by Renesas Electronics. It operates with a maximum access time of 12 ns and supports parallel interface communication. The device functions within a supply voltage range of 2.4 V to 2.6 V, with a maximum power consumption of 395 mA. It is housed in a 256-ball CABGA package and supports an industrial operating temperature range from -40 °C to +85 °C.

Memory IC Feature Summary

  • Dual-port architecture enabling simultaneous independent access to memory locations
  • Asynchronous operation for flexible system integration without clock synchronization
  • Automatic power-down feature controlled by chip enables for low standby power
  • Supports depth expansion through dual chip enables without external logic

Memory IC Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in embedded processing systems
  • Data storage in industrial automation controllers
  • Network switch buffer applications requiring concurrent port access

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as indicated in official documentation. Check for moisture sensitivity level requirements during handling and storage. Validate package integrity upon receipt. Ensure compatibility with existing design specifications before integration.

Memory IC Selection Notes

Select this component when dual-port concurrency is required for 512K x 18 data structures. Consider the 12 ns access speed for high-throughput asynchronous interfaces. Evaluate the 2.5V core voltage requirement against system power rails. Assess the 256-ball CABGA package constraints for PCB layout and thermal management capabilities.

Memory IC Part Context

This part belongs to the 70T633 series of dual-port SRAMs designed for high-performance memory applications. It shares architectural similarities with other members of the family but differs in organization and voltage specifications. The series targets applications demanding simultaneous read/write operations across two independent ports.

Memory IC Replacement Considerations

Official substitute part numbers include IDT70T633S12BCI. Verify pinout and electrical parameter compatibility before substitution. Confirm package dimensions match existing footprints. Review datasheet revisions for any functional differences between original and replacement components.

70T633S12BCI70T633S12BCI
$235.03
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