Memory IC 70T633S12BCI8 product image

70T633S12BCI8

$218.20
  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:289a69600521 Category: Brand:

  
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70T633S12BCI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S12BCI8

  • Description:IC SRAM 9MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T633S12BCI8

70T633S12BCI8

Memory IC Overview

The 70T633S12BCI8 is a dual-port static random-access memory (SRAM) device manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit organized as 512K words by 18 bits. The component operates with an access time of 12 ns and supports parallel interface communication. It functions within a supply voltage range of 2.4 V to 2.6 V and is designed for surface-mount installation in a 208-CABGA package measuring 15x15 mm. The device supports an operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Provides independent read/write operations on two ports simultaneously without bus conflicts
  • Supports asynchronous operation with fast 12 ns access times
  • Features low standby power consumption through automatic power-down modes

Memory IC Applications

  • High-speed data buffering in telecommunications systems
  • Cache memory implementation in embedded processing architectures
  • Data logging and temporary storage in industrial control units

Memory IC Procurement Notes

Verify the specific suffix configuration against official Renesas documentation to ensure compatibility with required packaging and environmental standards. Confirm current availability status as this component may be subject to discontinuation notices or production lifecycle changes. Cross-reference the exact part number with authorized distributors to validate authenticity and traceability before procurement.

Memory IC Selection Notes

Select this component when simultaneous bidirectional data transfer is required between two independent masters. Ensure the design accommodates the 2.5V nominal supply voltage and the 208-pin CABGA footprint constraints. Verify that the system timing requirements align with the 12 ns access specification and that thermal management supports the specified operating temperature range.

Memory IC Part Context

This device belongs to the 70T633 family of high-performance dual-port SRAMs. It shares architectural similarities with other members like the 70T633S12BFI but differs in package type and manufacturing lot specifications. The family is optimized for applications requiring high bandwidth and low latency data sharing between processors or peripherals.

Memory IC Replacement Considerations

Official substitutes include the 70T633S12BFI and 70T633S12BCI, though pinout and package dimensions differ. Verify electrical compatibility and mechanical fit before substitution.

70T633S12BCI870T633S12BCI8
$218.20
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