Memory IC 70T633S12BFI product image

70T633S12BFI

$233.93
  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:ddd021bd644e Category: Brand:

  
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70T633S12BFI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S12BFI

  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T633S12BFI

70T633S12BFI

Memory IC Overview

The 70T633S12BFI is a static random access memory component manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit organized as 512K x 18 bits. The device operates with a maximum access time of 12 ns and utilizes a parallel interface. It supports a supply voltage range from 2.4 V to 2.6 V. The component is designed for surface mount installation in a 208-CABGA package. It functions as an asynchronous dual-port RAM suitable for industrial temperature ranges.

Memory IC Feature Summary

  • Dual-port architecture enabling simultaneous independent access to the same memory location by two separate controllers.
  • Asynchronous operation mode providing flexible timing control without reliance on a global clock signal.
  • Standard power consumption profile optimized for general-purpose embedded applications.

Memory IC Applications

  • Data buffering in high-speed digital signal processing systems
  • Cache memory implementation in network communication equipment
  • Storage for configuration data in industrial automation controllers

Memory IC Procurement Notes

Verify the specific suffix BFI against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Confirm moisture sensitivity level requirements prior to assembly. Check for RoHS compliance status as indicated in current datasheets. Ensure ordering quantities align with manufacturer packaging standards. Validate lead times directly with authorized distributors due to potential supply chain variations.

Memory IC Selection Notes

Select this component when a 512K x 18 organization is required for dual-port memory tasks. The 12 ns access speed suits moderate-to-high frequency asynchronous interfaces. Verify that the 208-CABGA package fits the target PCB layout constraints. Compare power dissipation limits against system thermal design capabilities. Ensure the 2.5V nominal supply voltage matches the host system's power rails.

Memory IC Part Context

This part belongs to the Renesas 70T633 series of dual-port SRAMs. The series offers various access speeds and organizational configurations. These components are engineered for reliable data storage in demanding electronic environments. They support standard logic levels for easy integration into existing digital circuits.

Memory IC Replacement Considerations

IDT70T633S12BFI is listed as an alias for this component. Verify functional equivalence through official cross-reference documents before substitution. Ensure package dimensions and pin assignments match exactly to avoid hardware modifications.

70T633S12BFI70T633S12BFI
$233.93
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