Memory IC 70T633S12BFI8 product image

70T633S12BFI8

$218.20
  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:df1943eae778 Category: Brand:

  
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70T633S12BFI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T633S12BFI8

  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T633S12BFI8

70T633S12BFI8

Memory IC Overview

The 70T633S12BFI8 is a dual-port static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 Mbit organized as 512K x 18 bits. The device operates with an access time of 12 ns and utilizes a parallel interface. It requires a supply voltage between 2.4 V and 2.6 V. The component is housed in a 208-CABGA package measuring 15x15 mm. It supports an operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Dual-port architecture enabling simultaneous independent access to the same memory location
  • Asynchronous operation for flexible system integration without clock synchronization requirements
  • Integrated collision detection mechanisms to manage port contention effectively

Memory IC Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in embedded processing systems
  • Data logging applications requiring rapid write cycles

Memory IC Procurement Notes

Verify the specific suffix BFI8 against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Confirm moisture sensitivity level handling procedures prior to assembly. Check for RoHS compliance status as indicated in current datasheets. Ensure ordering quantities align with manufacturer packaging specifications.

Memory IC Selection Notes

Select this component when a 512K x 18 organization is required for dual-port asynchronous applications. Consider the 12 ns access speed and 2.5V core voltage requirements. Evaluate the 208-CABGA package dimensions for board space constraints. Compare against other 70T633 variants if different access times or package types are needed.

Memory IC Part Context

This part belongs to the 70T633 series of high-speed dual-port SRAMs. The series is designed for applications demanding fast, simultaneous read/write operations from two independent ports. It serves as a critical memory solution in systems requiring low-latency data exchange between processors or peripherals.

Memory IC Replacement Considerations

Check for direct substitutes within the 70T633 family with compatible pinouts. Verify equivalent access times and voltage levels. Consult Renesas engineering change notices for any functional updates or obsolescence information.

70T633S12BFI870T633S12BFI8
$218.20
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