70T633S15BC

Memory IC Overview

The Renesas Electronics Corporation 70T633S15BC is a dual-port static random-access memory (SRAM) device with a total storage capacity of 9 Mbit. The memory organization is structured as 512K words by 18 bits. It features an asynchronous parallel interface with a maximum access time of 15 ns. The device operates within a core voltage range of 2.4 V to 2.6 V, supporting both 2.5 V and 3.3 V I/O levels. It is housed in a 256-lead CABGA package measuring 17x17 mm and supports surface-mount installation.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on Port A and Port B
• Asynchronous operation without requiring a system clock signal for data transfer
• Supports mixed-voltage I/O interfaces compatible with both 2.5 V and 3.3 V logic levels

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data acquisition systems requiring rapid parallel data storage

Memory IC Procurement Notes

Verify the specific suffix requirements for your application, as variants such as 70T633S15BCI or 70T633S15BFI may offer different temperature ranges or packaging options. Confirm RoHS compliance status, as some listings indicate non-compliance. Check current availability and lead times directly with authorized distributors, as this component may have limited stock or be subject to long delivery periods due to manufacturing cycles.

Memory IC Selection Notes

Select this component when a high-density dual-port SRAM with 18-bit word width is required. Ensure the design accommodates the 2.5 V core voltage supply and 2.4 V to 2.6 V operating range. Consider the 256-CABGA package size for PCB layout constraints. Verify that the 15 ns access time meets the timing requirements of the target system bus. Compare against other members of the 70T633 family if different access speeds or pin counts are needed.

Memory IC Part Context

This part belongs to the Renesas 70T633 series of dual-port SRAMs. The series offers various densities and access times, with the 70T633S15BC providing a balance of density and speed. It is designed for applications requiring high bandwidth and low latency. The device is manufactured using advanced CMOS technology to ensure reliability and performance in industrial and commercial environments.

Memory IC Replacement Considerations

The 70T633S15BCI is listed as a similar alternative, potentially offering an extended industrial temperature range. Other variants in the 70T633 family, such as those with different access times (e.g., 10 ns or 12 ns), may serve as functional substitutes if timing specifications allow. Verify pin compatibility and electrical characteristics before substitution.