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70T651S10BC is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.
The Renesas 70T651S10BC is a dual-port asynchronous static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 Mbit, organized as 256K words by 36 bits. The device features a parallel interface with a maximum access time of 10 ns. It operates within a supply voltage range of 2.4 V to 2.6 V and is housed in a 256-CABGA package measuring 17x17 mm.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure proper handling procedures are followed due to surface mount packaging requirements. Validate that the specific suffix matches design specifications for pinout and electrical characteristics.
Select this component when dual-port functionality is required for concurrent data processing tasks. Consider the 256K x 36 organization for wide data bus applications. Evaluate the 10 ns access speed against system timing constraints. Ensure the 2.5V nominal supply voltage aligns with the target platform's power delivery network.
This part belongs to the Renesas 70T651 series of high-density dual-port SRAMs. These devices are designed for applications demanding high bandwidth and low latency. The series typically offers various access times and package options to suit different form factor and performance requirements in embedded and industrial markets.
Check for equivalent parts such as the 70T651S10BF or 70T651S10BC8 if package variations are acceptable. Verify compatibility regarding pin configuration and electrical parameters before substitution.
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