Memory IC 70T651S10BF product image

70T651S10BF

$229.39
  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:8d9bd4e7c4f4 Category: Brand:

  
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70T651S10BF is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T651S10BF

  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T651S10BF

70T651S10BF

Memory IC Overview

The Renesas Electronics Corporation 70T651S10BF is a 9 Mbit asynchronous dual-port static random-access memory (SRAM) IC. It features a memory organization of 256K x 36 bits and supports parallel interface access with a maximum access time of 10 ns. The device operates on a single 2.5V power supply, ranging from 2.4V to 2.6V. It is housed in a 208-pin CABGA package measuring 15x15 mm. The component is designed for surface mount installation and functions within a commercial temperature range of 0°C to 70°C.

Memory IC Feature Summary

  • Supports simultaneous independent access to the same memory location by two separate ports
  • Includes automatic power-down functionality controlled by chip enable signals for low standby power
  • Features on-chip hardware support for semaphore signaling between ports

Memory IC Applications

  • High-speed data buffering in telecommunications systems
  • Cache memory implementation in embedded processing architectures
  • Data storage in industrial control applications requiring concurrent read/write operations

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance requirements as this specific variant may not meet current environmental standards. Validate package integrity and moisture sensitivity level handling procedures prior to assembly to ensure reliability in final deployment.

Memory IC Selection Notes

Select this component when a 256K x 36 configuration is required for asynchronous dual-port applications. Ensure the design accommodates the 208-CABGA footprint and 2.5V I/O voltage levels. Consider thermal management for the 0°C to 70°C operating range. Evaluate alternative packages if higher temperature ratings or different pin counts are necessary for the target system.

Memory IC Part Context

This part belongs to the 70T651 series of high-speed asynchronous dual-port SRAMs. The series offers various access speeds and packaging options to suit different system performance needs. The 70T651S10BF specifically targets applications requiring fast 10 ns access times within a compact 208-ball BGA form factor, providing a balance of speed and density for complex digital designs.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers include 70T651S12BFI.

70T651S10BF70T651S10BF
$229.39
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