70T651S10BFG

Memory IC Overview

The Renesas Electronics Corporation 70T651S10BFG is a dual-port static random-access memory (SRAM) integrated circuit. It features a storage capacity of 9 Mbit organized as 256K x 36 bits. The device operates with an access time of 10 ns and utilizes a parallel interface. It supports a supply voltage range from 2.4 V to 2.6 V. The component is housed in a 208-CABGA package measuring 15x15 mm. It is designed for surface mount installation and functions within a temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Provides independent read/write ports for simultaneous data access by two masters.
• Supports asynchronous operation with fast 10 ns access times.
• Features a compact 208-pin CABGA surface-mount package.

Memory IC Applications

• High-speed data buffering in telecommunications systems
• Cache memory implementation in embedded processors
• Network switch and router packet processing

Memory IC Procurement Notes

Verify the specific suffix BFG against official datasheets to confirm package dimensions and pinout compatibility. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check for end-of-life notices or product change notifications that may affect long-term availability.

Memory IC Selection Notes

Select this component when dual-port functionality is required for concurrent master access. Ensure the 2.4V to 2.6V supply voltage aligns with system power rails. Verify that the 208-CABGA footprint fits the PCB layout constraints and thermal management requirements.

Memory IC Part Context

This part belongs to the 70T651 series of high-performance dual-port SRAMs. It is manufactured by Renesas Electronics Corporation, formerly IDT. The series is designed for applications requiring high bandwidth and low latency memory solutions.

Memory IC Replacement Considerations

IDT70T651S10BFG