Memory IC 70T651S10BFI8 product image

70T651S10BFI8

$229.14
  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:465ac9d5e2e2 Category: Brand:

  
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70T651S10BFI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T651S10BFI8

  • Description:IC SRAM 9MBIT PARALLEL 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T651S10BFI8

70T651S10BFI8

Memory IC Overview

The Renesas Electronics Corporation 70T651S10BFI8 is a 9 Mbit (256K x 36) asynchronous dual-port static RAM. It operates with a 10 ns access time and supports a parallel interface. The device requires a core supply voltage of 2.4V to 2.6V and functions within an industrial temperature range of -40°C to +85°C. It is housed in a 208-CABGA package measuring 15x15 mm.

Memory IC Feature Summary

  • Dual-port architecture enabling simultaneous independent access to memory locations from two separate ports.
  • Integrated hardware semaphore signaling for efficient port arbitration and contention management.
  • Supports RapidWrite mode to simplify high-speed consecutive write cycles.
  • Includes JTAG functionality for testing and boundary scan operations.

Memory IC Applications

  • High-speed data buffering in telecommunications equipment
  • Network switching and routing applications
  • Industrial control systems requiring reliable data storage
  • Automotive electronics utilizing dual-port memory

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance, as some variants are non-compliant. Check moisture sensitivity level handling requirements before assembly. Validate pinout compatibility with existing PCB layouts. Ensure supply chain stability given discontinued manufacturing status.

Memory IC Selection Notes

Select this component for designs requiring fast, concurrent read/write operations without external arbitration logic. Consider the 208-CABGA package size for board space constraints. Evaluate power consumption against system thermal limits. Compare access times with alternative devices if higher speed is needed. Verify voltage levels match system I/O standards.

Memory IC Part Context

This part belongs to the 70T651 series of high-speed asynchronous dual-port SRAMs. It is designed for standalone use or cascaded configurations to expand data bus width. The series supports both 3.3V and 2.5V I/O options while maintaining a single 2.5V core supply.

Memory IC Replacement Considerations

Check for direct substitutes like 70T651S12BFI8 for similar specifications with different timing. Verify package compatibility when considering alternatives. Review feature sets to ensure critical functions like semaphore support are retained.

Memory IC FAQ

Does the 70T651S10BFI8 support depth expansion?

Yes, dual chip enables allow for depth expansion without requiring external logic.

What is the maximum operating temperature?

The maximum operating temperature is +85°C.

Can the device be used in cascaded configurations?

Yes, it can be cascaded to expand data bus width to 72 bits or more using Master/Slave select.

70T651S10BFI870T651S10BFI8
$229.14
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