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70T651S12BFGI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208CABGA. Review the specifications below when checking this part for your BOM.
The 70T651S12BFGI8 is a high-speed asynchronous dual-port static random access memory manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit organized as 256K x 36 bits with a maximum access time of 12 ns. The device operates on a single 2.5V core supply and supports selectable 3.3V or 2.5V I/O voltages. It is housed in a 208-pin CABGA package measuring 15x15 mm and functions within an industrial temperature range of -40°C to +85°C.
Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance and moisture sensitivity level prior to soldering. Check for specific packaging variations such as tape and reel quantities. Validate that the selected variant matches the required voltage and package specifications for the target design.
Select this component when simultaneous bidirectional memory access is required without external control logic. Ensure the system supports the specified 2.5V core and selectable I/O voltage levels. Consider the 208-pin CABGA footprint for PCB layout. Verify thermal requirements against the industrial operating range if deployed in harsh environments.
This part belongs to the 70T651 series of asynchronous dual-port SRAMs designed for high-performance embedded applications. It replaces earlier generations with enhanced speed and lower power consumption. The series supports flexible configuration options including interleaved I/Os and depth expansion capabilities for complex system architectures.
The 70T651S12BFI is listed as a similar replacement option. Verify pin compatibility and electrical parameters before substitution. Other variants in the 70T651 family may offer different access times or packaging options.
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